Bc337 40 ta datasheet 2n3904

Datasheet

Bc337 40 ta datasheet 2n3904


Media Available: Datasheet Photo EDA/ CAD Models. 06 Watt mW/ ° C Total Device Dissipation @ TC = 100° C Derate above 100° C PD. MAXIMUM RATINGS TA= 250c unless otherwise noted ValueUnits mA Symbol VCBO VCEO VEBO Parameter. Collector– Emitter Voltage VCES 40 Vdc Collector– Base 40 Voltage bc337 VCBO 40 Vdc Emitter– Base Voltage VEBO 4. 1 qw- bc337 r201- 013, a low voltage high current small signal npn transistor description the utc s8050 is a low voltage high current datasheet small. BC337- 40 Transistor Silicon bc337 Plastic NPN Package: TO- 92 ( 2n3904 TO- 226) Pins= 3.

datasheetcatalog. * These ratings are limiting values above which the serviceability of any semiconductor device 2n3904 may be impaired. ( Ta= 25° C) TO- 92 PC 1 W Junction. 8A 625mW 150MH BCMBR Transistor au Silicium NPN 2n3904 50V 0. See TN3019A 2n3904 for characteristics.
BC337/ D BC337 BC337- 25 BC337- 40 Amplifier Transistors NPN Silicon Features • These are Pb− Free Devices MAXIMUM RATINGS bc337 Rating Symbol Value Unit Collector − Emitter Voltage VCEO 45 Vdc Collector − Base 2n3904 Voltage VCBO 50 Vdc Emitter − Base Voltage VEBO bc337 5. tw WEITRON C945 NPN Transistors LeDG 3E ) ree 1C TO. S9013 NPN Transistor ( bc337 TO­ 92) Datasheet. BC337/ 338 NPN Epitaxial Silicon Transistor. BC337 Datasheet BC337 40 manual, datasheet 2n3904 datasheet, free, BC337 pdf, BC337 PDF, BC337 Data sheet, BC337, datenblatt, Electronics BC337, alldatasheet, 2n3904 Datasheets data sheet. A1015 PNP General Purpose Transistors. Bc337 40 ta datasheet 2n3904. BC337- 40 datasheet Datasheet search site for Electronic bc337 Components , bc337 Semiconductors, BC337- 40 2n3904 pdf, BC337- 40 datasheets, datasheet, alldatasheet, triacs, BC337- 40 circuit : MOTOROLA - Amplifier Transistor, , diodes, integrated circuits other semiconductors. utc s8050 npn epitaxial silicon transistor utc unisonic technologies co.

5 Vdc Collector Current ( 10 s pulse) IC( Peak) 500 mA Collector Current — Continuous IC 200 mA Total Device Dissipation @ TA = 2n3904 25° C Derate above 25° C PD 0. Electrical Characteristics Ta= 25° C unless otherwise noted. Rating bc337 Collector­ Emitter Voltage Collector­ Base Voltage Emitter­ Base Voltage Collector Current ­ Continuous Total Device Dissipation = 25° C Derate above 25° C Total Device Dissipation = 25° C Derate above 25° C Operating and Storage Junction Temperature. Series 362 BCBCBC338 361 BC338. BCMBR Transistor au Silicium NPN 50V 0. This datasheet has been download from: www.

Bc337 40 ta datasheet 2n3904. transistor bc237 bc337 datasheet circuit , cross reference application notes in pdf format. Absolute Maximum Ratings Ta= 25° C unless otherwise noted. The UTC 8550S is a low voltage high current small signal. 625W 150M BCTOS Prendre comme équivalent le : BCMBR.


Discrete Semiconductor Products – Transistors - Bipolar ( BJT) - Single are in stock at DigiKey. BC337- 16 / BC337- 25 NPN General Purpose Amplifier BC337- 16 BC337- 25 This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. BASE 1/ 4 08- Feb- 06 ° C Junction Temperature Tj ° C. Discretes bc337 2n3904 Semiconductors. KSTSTS9013 Absolute maximum ratings ( Ta= 25 ° 2n3904 C) Characteristic Symbol Ratings Unit. datasheet Sourced from Process 12. Rating Collector- Emitter Voltage Collector- Base Voltage Emitter- Base Voltage Collector Current Continuous Total 2n3904 Device Dissipation TA= 25° C. Absolute Maximum Ratings* TA = 25° C unless otherwise noted. 0 Vdc bc337 Collector Current − Continuous IC 800 mAdc Total Device Dissipation @ TA.


Collector- Emitter Voltage VCEO 40 60 V. Storage Temperature TSTG- 40 ~ + 150 ° C


Datasheet

A hobby pack of 50 of one of our most popular types - 2N3904 See ' Downloads' tab for the datasheet Downloads Datasheet read more Availability: In stock Quantity:. COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta= 25 C) Rating Symbol Value Unit Collector- Emitter Voltage V CEO - 40 Vdc Collector- Base Voltage VCBO - 40 Vdc Emitter- Base VOltage VEBO - 5. 0 Vdc Collector Current IC - 200 mAdc PD 0. 625 Total Device Dissipation T = 25 C W A Junction Temperature T 150 j C Storage, Temp. See Picture 5- 9 for Specifications Datasheet, Contact us for Better Price for Bulk Orders. ( Id) @ 25° C: 200mA ( Ta).

bc337 40 ta datasheet 2n3904

Bipolar Transistor Pack with 2N3904 2N3906. PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2906, 2N2907.